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| 2SC5237 Silicon NPN Epitaxial Application High frequency amplifier Features * Excellent high frequency characteristics fT = 400 MHz typ * High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ * Suitable for wide band video amplifier Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 2SC5237 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC Tj Tstg Ratings 250 250 3 150 300 1.4 8* Junction temperature Storage temperature Note: 1. TC = 25C 1 Unit V V V mA mA W 150 -55 to +150 C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 250 250 -- -- 1 Typ -- -- -- -- -- -- -- 400 3.5 Max -- -- 1.0 10 200 1.0 1.0 -- 5.0 Unit V V A A -- V V MHz pF Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = VCB = 200 V, IE = 0 VEB = 3 V, IC = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 50 mA IC = 50 mA, IB = 5 mA VCE = 30 V, IC = 50 mA VCB = 30 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: ICBO IEBO hFE* VBE VCE(sat) fT Cob 60 -- -- 300 -- 1. The 2SC2537 is grouped by hFE and its specification is as follows. B 60 to 120 C 100 to 200 2 2SC5237 Maximum Collector Dissipation Curve 8 Collector Power Dissipation Pc (W) 6 Tc 4 2 1.4W Ta 0 50 100 150 200 Case Temperature Tc (C) Ambient Temperature Ta (C) Area of Safe Operation 1000 I C (mA) 500 1 shot pulse (Ta = 25 C) ic(peak) 10 PW Collector Current 200 I max C 100 m s = 1m s DC n C tio 5 ra 2 pe = O (Tc 50 20 10 10 20 50 100 200 500 Collector to Emitter Voltage VCE (V) Typical Output Characteristics 200 I C (mA) A 20 m mA 18 6 mA 1 4 mA 1 mA 12 mA 10 A 8m A 6m 4 mA ) Collector Current 100 2 mA Tc = 25 C IB= 0 0 5 10 Collector to Emitter Voltage VCE (V) 3 2SC5237 1000 DC Current Transfer Ratio hFE 500 DC Current Transfer Ratio vs. Collector Current 200 100 50 Tc = 75C 25C -25C 20 VCE = 10 V 10 1 2 5 10 20 50 100 200 Collector Current I C (mA) Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (V) 10 5 2 1 0.5 Tc = 75C 0.2 0.1 1 -25C 25C 2 5 10 20 50 100 200 Collector Current I C (mA) Base to Emitter Saturation Voltage vs. Collector Current 10 Base to Emitter Saturation Voltage V BE(sat) (V) 5 I C / I B = 10 I C/ I B = 10 0.05 2 1 -25C 25C 0.5 Tc = 75C 0.2 0.1 1 2 5 10 20 50 100 200 Collector Current I C (mA) 4 2SC5237 200 I C (mA) 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 Base to Emitter Voltage VBE (V) Gain Bandwidth Product vs. Collector Current 1000 Collector Current vs. Base to Emitter Voltage VCE = 10 V Tc = 75C 25C -25C Gain Babdwidth Product f T (MHz) Collector Current 500 200 100 50 20 10 V CE = 30 V Tc = 25 C 1 2 5 10 20 50 100 200 Collector Current I C (mA) Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 20 10 5 2 IE = 0 f = 1 MHz 1 2 5 10 20 50 100 Collector to Base Voltage V CB (V) 1 5 2SC5237 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 6 |
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